Invention Grant
US08902690B2 Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
有权
需要单极编程的双极型二极管三维存储器的解码方案
- Patent Title: Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
- Patent Title (中): 需要单极编程的双极型二极管三维存储器的解码方案
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Application No.: US13584423Application Date: 2012-08-13
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Publication No.: US08902690B2Publication Date: 2014-12-02
- Inventor: Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant: Kailash Gopalakrishnan , Chung H. Lam , Jing Li , Robert K. Montoye
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Vazken Alexanian
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A system and method for operating a unipolar memory cell array including a bidirectional access diode. An example embodiment is a method including determining if the operating state of the unipolar memory cell is in a select state or a deselect state and the programming state is a read state or a write state. The method switches a column voltage switch based on the operating state and the programming state of the unipolar memory cell. The method further switches a row voltage switch based on the operating state and the programming state of the unipolar memory cell.
Public/Granted literature
- US20140022851A1 DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING UNIPOLAR PROGRAMMING Public/Granted day:2014-01-23
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