Invention Grant
US08902946B2 Photonic crystal surface-emitting lasers enabled by an accidental Dirac point
有权
由意外狄拉克点启用的光子晶体表面发射激光器
- Patent Title: Photonic crystal surface-emitting lasers enabled by an accidental Dirac point
- Patent Title (中): 由意外狄拉克点启用的光子晶体表面发射激光器
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Application No.: US13771935Application Date: 2013-02-20
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Publication No.: US08902946B2Publication Date: 2014-12-02
- Inventor: Song Liang Chua , Ling Lu , Marin Soljacic
- Applicant: Song Liang Chua , Ling Lu , Marin Soljacic
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Cooley LLP
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/187 ; H01S5/18

Abstract:
A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.
Public/Granted literature
- US20140064310A1 PHOTONIC CRYSTAL SURFACE-EMITTING LASERS ENABLED BY AN ACCIDENTAL DIRAC POINT Public/Granted day:2014-03-06
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