Invention Grant
US08904090B2 Non-volatile memory device, devices having the same, and method of operating the same
有权
非易失性存储器件，具有相同的器件及其操作方法
- Patent Title: Non-volatile memory device, devices having the same, and method of operating the same
- Patent Title (中): 非易失性存储器件，具有相同的器件及其操作方法
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Application No.: US13289701Application Date: 2011-11-04
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Publication No.: US08904090B2Publication Date: 2014-12-02
- Inventor: Sung Hoon Baek , Won Moon Cheon
- Applicant: Sung Hoon Baek , Won Moon Cheon
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0124839 20101208
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/08 ; G06F12/00 ; G06F13/00
Abstract:
A flash memory and a method of writing data to a flash memory during garbage collection of the flash memory is provided. First, a garbage collection process on a victim block of flash memory may be initiated. A garbage collection process may comprise a plurality of garbage collection operation. A program command and corresponding program data may be received. After a first garbage collection operation has finished and a portion of flash data from the victim block has been written to a free block, a portion of the program data may be written to that free block. If data remains in the victim block, a second garbage collection operation may be performed.
Public/Granted literature
- US20120151124A1 Non-Volatile Memory Device, Devices Having the Same, and Method of Operating the Same Public/Granted day:2012-06-14
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