Invention Grant
US08904142B2 Semiconductor memory system controlling writing of data to nonvolatile memories using consecutive logical addresses
有权
控制使用连续逻辑地址将数据写入非易失性存储器的半导体存储器系统
- Patent Title: Semiconductor memory system controlling writing of data to nonvolatile memories using consecutive logical addresses
- Patent Title (中): 控制使用连续逻辑地址将数据写入非易失性存储器的半导体存储器系统
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Application No.: US14196187Application Date: 2014-03-04
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Publication No.: US08904142B2Publication Date: 2014-12-02
- Inventor: Yoshiyuki Tanaka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-338551 20030923
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F12/00 ; G06F3/06 ; G06F12/02 ; G11C16/10 ; G11C11/00
Abstract:
A semiconductor storage device includes a first nonvolatile memory to store user data of a file, a second nonvolatile memory to store management data of the file, the second nonvolatile memory being different in type from the first nonvolatile memory, and a controller to control read/write of data with respect to the first and second nonvolatile memories.
Public/Granted literature
- US20140189221A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF CONTROLLING THE SAME Public/Granted day:2014-07-03
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