Invention Grant
US08904161B2 Memory system and reset method thereof to prevent nonvolatile memory corruption due to premature power loss
有权
存储器系统及其复位方法，以防止由于过早的功率损耗导致的非易失性存储器损坏
- Patent Title: Memory system and reset method thereof to prevent nonvolatile memory corruption due to premature power loss
- Patent Title (中): 存储器系统及其复位方法，以防止由于过早的功率损耗导致的非易失性存储器损坏
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Application No.: US13239454Application Date: 2011-09-22
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Publication No.: US08904161B2Publication Date: 2014-12-02
- Inventor: Hojun Shim , Woo-Sung Cho
- Applicant: Hojun Shim , Woo-Sung Cho
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Ellsworth IP Group PLLC
- Main IPC: G06F9/00
- IPC: G06F9/00 ; G11C5/14 ; G11C16/22
Abstract:
Provided is a memory system that includes at least one nonvolatile memory device, a plurality of power lines and a plurality of power domains. The power lines receive a power source voltage. The power domains are respectively connected to the power lines. A reset signal is generated by using voltages which are detected from the power lines. The memory system and a reset method thereof detect the voltages of all power lines to generate a reset signal, and thus enhance reliability of data when a power is shut off.
Public/Granted literature
- US20120102310A1 MEMORY SYSTEM AND RESET METHOD THEREOF Public/Granted day:2012-04-26
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