Invention Grant
- Patent Title: Structure for stacked CMOS circuits
- Patent Title (中): 堆叠CMOS电路的结构
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Application No.: US13850508Application Date: 2013-03-26
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Publication No.: US08904322B2Publication Date: 2014-12-02
- Inventor: Vikas Agarwal , Samantak Gangopadhyay , Shashank Joshi , Manish Kumar
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Patent Mining Works, LLC
- Agent Derek S. Jennings
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An automated method of modifying a semiconductor chip design includes creating a timing analysis of said semiconductor chip design, identifying a plurality of gates in said semiconductor chip design which have either too fast a rising edge or falling edge, for each gate in said plurality of gates adding a stacked transistor to provide delay to the rising or falling edge of the gate. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure includes a CMOS device having a first transistor with a first input, a pair of stacked transistors having a second input, and an output.
Public/Granted literature
- US20140298282A1 DESIGN STRUCTURE FOR STACKED CMOS CIRCUITS Public/Granted day:2014-10-02
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