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US08904324B2 Parameterized cell for planar and finFET technology design 有权
用于平面和finFET技术设计的参数化单元

Parameterized cell for planar and finFET technology design
Abstract:
A parameterized cell for planar and finFET designs is provided. A parameterized cell (Pcell) describing a planar design is integrated with fin-based design criteria, including fin pitch. For material regions in a planar design that have a corresponding region in a fin design, a quantized value based on the fin pitch is computed. The material can include regions such as active area silicon, contact regions, and local interconnect regions.
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