Invention Grant
- Patent Title: Method of fabricating an interconnect device
- Patent Title (中): 制造互连器件的方法
-
Application No.: US13087404Application Date: 2011-04-15
-
Publication No.: US08904631B2Publication Date: 2014-12-09
- Inventor: Kevin Matthew Durocher , William Edward Burdick, Jr. , Yuru Alexeyevich Plotnikov , David DeCrescente, Jr.
- Applicant: Kevin Matthew Durocher , William Edward Burdick, Jr. , Yuru Alexeyevich Plotnikov , David DeCrescente, Jr.
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Melissa K. Dobson
- Main IPC: H05K3/02
- IPC: H05K3/02 ; H05K3/10 ; H05K3/24 ; H05K3/42 ; H05K1/03 ; H05K3/40

Abstract:
An interconnect device and a method for fabricating same. An embodiment of the invention includes sequential steps of providing a flexible substrate, forming vias through the flexible substrate, applying a conductive seed layer including first and second portions, applying conductive materials including first and second portions, copper plating the substrate, and then removing the second portions of the conductive seed layer and the conductive materials.
Public/Granted literature
- US20120261165A1 INTERCONNECT DEVICE AND METHOD OF FABRICATING SAME Public/Granted day:2012-10-18
Information query