Invention Grant
- Patent Title: Memory socket with special contact mechanism
- Patent Title (中): 内存插座具有特殊接触机构
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Application No.: US13772302Application Date: 2013-02-20
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Publication No.: US08905773B2Publication Date: 2014-12-09
- Inventor: Chih-Cheng Liang
- Applicant: Nanya Technology Corp.
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01R13/15
- IPC: H01R13/15 ; H01R12/87

Abstract:
A memory socket with a special contact mechanism comprising a plurality of socket pins arranged in two opposite rows leaning respectively against two inner projecting portions in a socket frame, and an interacting member movably installed between the two rows of the socket pins having a cam portion to pushes the socket pin at both sides away from the interacting member during the insertion of a memory module, so that the socket pin may be bended to contact the inserted memory module.
Public/Granted literature
- US20140235107A1 MEMORY SOCKET WITH SPECIAL CONTACT MECHANISM Public/Granted day:2014-08-21
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