Invention Grant
- Patent Title: Method of atomic layer deposition using metal precursors
- Patent Title (中): 使用金属前体的原子层沉积方法
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Application No.: US13549910Application Date: 2012-07-16
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Publication No.: US08906457B2Publication Date: 2014-12-09
- Inventor: David Thompson , Jeffrey W. Anthis , Christian Dussarrat , Clement Lansalot-Matras
- Applicant: David Thompson , Jeffrey W. Anthis , Christian Dussarrat , Clement Lansalot-Matras
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/455

Abstract:
Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups.
Public/Granted literature
- US20130059077A1 Method of Atomic Layer Deposition Using Metal Precursors Public/Granted day:2013-03-07
Information query
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