Invention Grant
US08906471B2 Method of depositing metallic film by plasma CVD and storage medium
有权
通过等离子体CVD和存储介质沉积金属膜的方法
- Patent Title: Method of depositing metallic film by plasma CVD and storage medium
- Patent Title (中): 通过等离子体CVD和存储介质沉积金属膜的方法
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Application No.: US12934420Application Date: 2009-03-25
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Publication No.: US08906471B2Publication Date: 2014-12-09
- Inventor: Shinya Okabe
- Applicant: Shinya Okabe
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2008-087652 20080328
- International Application: PCT/JP2009/055885 WO 20090325
- International Announcement: WO2009/119627 WO 20091001
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/44 ; C23C16/50

Abstract:
For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.
Public/Granted literature
- US20110086184A1 METHOD OF DEPOSITING METALLIC FILM AND MEMORY MEDIUM Public/Granted day:2011-04-14
Information query
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