Invention Grant
US08906471B2 Method of depositing metallic film by plasma CVD and storage medium 有权
通过等离子体CVD和存储介质沉积金属膜的方法

  • Patent Title: Method of depositing metallic film by plasma CVD and storage medium
  • Patent Title (中): 通过等离子体CVD和存储介质沉积金属膜的方法
  • Application No.: US12934420
    Application Date: 2009-03-25
  • Publication No.: US08906471B2
    Publication Date: 2014-12-09
  • Inventor: Shinya Okabe
  • Applicant: Shinya Okabe
  • Applicant Address: JP Tokyo
  • Assignee: Tokyo Electron Limited
  • Current Assignee: Tokyo Electron Limited
  • Current Assignee Address: JP Tokyo
  • Agency: Abelman, Frayne & Schwab
  • Priority: JP2008-087652 20080328
  • International Application: PCT/JP2009/055885 WO 20090325
  • International Announcement: WO2009/119627 WO 20091001
  • Main IPC: C23C16/00
  • IPC: C23C16/00 C23C16/44 C23C16/50
Method of depositing metallic film by plasma CVD and storage medium
Abstract:
For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.
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