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US08906487B2 Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film 有权
具有单晶碳化硅膜的基材，单晶碳化硅膜的制造方法以及使用单晶碳化硅膜制造基材的方法

Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film
Abstract:
In a base material with a single-crystal silicon carbide film according to an embodiment of the invention, a plurality of recessed portions is formed on the surface of a silicon substrate, an insulating film including silicon oxide is formed across the surface of the silicon substrate including the inner surfaces of the recessed portions, the top surfaces of side wall portions of recessed portions of the insulating film form flat surfaces, a single-crystal silicon carbide film is joined on the flat surfaces, and the recessed portions below the single-crystal silicon carbide film form holes.
Abstract(Chinese):

在根据本发明的实施方案的具有单晶碳化硅膜的基材中，在硅衬底的表面上形成多个凹部，在硅衬底的表面上形成包括氧化硅的绝缘膜 包括凹部的内表面，绝缘膜的凹部的侧壁部的顶面形成平坦面，在平坦面上接合单晶碳化硅膜，并且单晶的下方的凹部 碳化硅膜形成孔。

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