Invention Grant
- Patent Title: Stacked mask
- Patent Title (中): 堆叠的面具
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Application No.: US13722646Application Date: 2012-12-20
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Publication No.: US08906583B2Publication Date: 2014-12-09
- Inventor: Burn Jeng Lin , Hsin-Chang Lee , Sheng-Chi Chin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes & Boone, LLP
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/26 ; G03F1/58

Abstract:
The present disclosure describes a mask. The mask includes a low thermal expansion material (LTEM) substrate, at least two absorber layers, and a spacer layer separating the two absorber layers. The first absorber layer is deposited over the LTEM substrate. The mask further includes a topcoat layer over the absorber layer. A thickness of the spacer layer is approximately equal to a height of a topography feature on a wafer substrate multiplied by the square of a demagnification of an objective lens. The absorber layers include staged patterns.
Public/Granted literature
- US20140178804A1 Stacked Mask Public/Granted day:2014-06-26
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