Invention Grant
US08906706B2 Method of fabricating a mask structure for patterning a workpiece by ions
有权
通过离子制造用于图案化工件的掩模结构的方法
- Patent Title: Method of fabricating a mask structure for patterning a workpiece by ions
- Patent Title (中): 通过离子制造用于图案化工件的掩模结构的方法
-
Application No.: US13415659Application Date: 2012-03-08
-
Publication No.: US08906706B2Publication Date: 2014-12-09
- Inventor: Kanaiyalal C. Patel , Kurt A. Rubin
- Applicant: Kanaiyalal C. Patel , Kurt A. Rubin
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.
Public/Granted literature
- US20130236987A1 SYSTEM, METHOD AND APPARATUS FOR MASK STRUCTURE FOR PATTERNING A WORKPIECE BY IONS Public/Granted day:2013-09-12
Information query
IPC分类: