Invention Grant
- Patent Title: Crystallization processing for semiconductor applications
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Application No.: US14175110Application Date: 2014-02-07
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Publication No.: US08906725B2Publication Date: 2014-12-09
- Inventor: Stephen Moffatt
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/268
- IPC: H01L21/268 ; C30B13/24
Abstract:
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.
Public/Granted literature
- US20140150712A1 CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS Public/Granted day:2014-06-05
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