A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order, wherein the first semiconductor layer includes a buffer layer, an intrinsic semiconductor layer, and a doped semiconductor layer stacked in that order. Fourth, the doped semiconductor layer is exposed by removing the substrate, the buffer layer, and the intrinsic semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer.