Invention Grant
- Patent Title: Method of manufacturing a device with a cavity
- Patent Title (中): 制造具有空腔的装置的方法
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Application No.: US13673494Application Date: 2012-11-09
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Publication No.: US08906729B2Publication Date: 2014-12-09
- Inventor: Greja Johanna Adriana Maria Verheijden , Roel Daamen , Gerhard Koops
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Priority: EP08103686 20080423
- Main IPC: B81C3/00
- IPC: B81C3/00 ; H01L29/84 ; H01L21/311 ; H01L21/50 ; H01L21/02 ; B81C1/00

Abstract:
The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant, and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity, i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.
Public/Granted literature
- US20130069178A1 Method of Manufacturing a Device with a Cavity Public/Granted day:2013-03-21
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