Invention Grant
- Patent Title: Method for fabricating a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13432633Application Date: 2012-03-28
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Publication No.: US08906749B2Publication Date: 2014-12-09
- Inventor: Michael Bauer , Daniel Porwol , Ulrich Wachter
- Applicant: Michael Bauer , Daniel Porwol , Ulrich Wachter
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/22
Abstract:
A semiconductor device and a method for making a semiconductor device are disclosed. In an embodiment a semiconductor device includes a semiconductor chip and a fiber reinforced encapsulation layer at least partly covering the semiconductor chip.
Public/Granted literature
- US20130256922A1 Method for Fabricating a Semiconductor Device Public/Granted day:2013-10-03
Information query
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