Invention Grant
US08906751B2 Silicon controlled rectifiers (SCR), methods of manufacture and design structures
有权
硅控整流器（SCR），制造方法和设计结构
- Patent Title: Silicon controlled rectifiers (SCR), methods of manufacture and design structures
- Patent Title (中): 硅控整流器（SCR），制造方法和设计结构
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Application No.: US12985840Application Date: 2011-01-06
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Publication No.: US08906751B2Publication Date: 2014-12-09
- Inventor: Michel J. Abou-Khalil , Kiran V. Chatty , Robert J. Gauthier, Jr. , Junjun Li
- Applicant: Michel J. Abou-Khalil , Kiran V. Chatty , Robert J. Gauthier, Jr. , Junjun Li
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/66 ; H01L27/02 ; H01L29/08 ; H01L29/74
Abstract:
Silicon controlled rectifiers (SCR), methods of manufacture and design structures are disclosed herein. The method includes forming a common P-well on a buried insulator layer of a silicon on insulator (SOI) wafer. The method further includes forming a plurality of silicon controlled rectifiers (SCR) in the P-well such that N+ diffusion cathodes of each of the plurality of SCRs are coupled together by the common P-well.
Public/Granted literature
- US20120178222A1 SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DESIGN STRUCTURES Public/Granted day:2012-07-12
Information query
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