Invention Grant
- Patent Title: Method of semiconductor manufacturing process
- Patent Title (中): 半导体制造工艺方法
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Application No.: US13163378Application Date: 2011-06-17
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Publication No.: US08906778B2Publication Date: 2014-12-09
- Inventor: YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
- Applicant: YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
- Applicant Address: TW
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW
- Agency: Volpe and Koenig, P.C.
- Priority: TW100107823A 20110308
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/02 ; H01L21/18 ; H01L33/00
Abstract:
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
Public/Granted literature
- US20120231614A1 METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS Public/Granted day:2012-09-13
Information query
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