Invention Grant
- Patent Title: Method for making epitaxial structure
- Patent Title (中): 制造外延结构的方法
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Application No.: US13276309Application Date: 2011-10-18
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Publication No.: US08906788B2Publication Date: 2014-12-09
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201110005809 20110112; CN201110025710 20110124; CN201110025768 20110124; CN201110025832 20110124; CN201110076867 20110329; CN201110076876 20110329; CN201110076886 20110329; CN201110076887 20110329; CN201110076893 20110329; CN201110076901 20110329; CN201110076903 20110329; CN201110077488 20110329; CN201110095149 20110415
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L33/12 ; B82Y30/00 ; B82Y40/00 ; C30B25/02 ; C30B25/18 ; C30B29/40 ; H01L29/06 ; H01L33/00
Abstract:
A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A first carbon nanotube layer is placed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the epitaxial growth surface. A second carbon nanotube layer is placed on the first epitaxial layer. A second epitaxial layer is epitaxially grown on the first epitaxial layer.
Public/Granted literature
- US20120178245A1 METHOD FOR MAKING EPITAXIAL STRUCTURE Public/Granted day:2012-07-12
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