Invention Grant
- Patent Title: Single fin cut employing angled processing methods
- Patent Title (中): 采用角加工方法的单翅切割
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Application No.: US13648321Application Date: 2012-10-10
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Publication No.: US08906807B2Publication Date: 2014-12-09
- Inventor: Marc A. Bergendahl , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Catherine Ivers, Esq.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/12

Abstract:
Fin-defining spacers are formed on an array of mandrel structure. Mask material portions can be directionally deposited on fin-defining spacers located on one side of each mandrel structure, while not deposited on the other side. A photoresist layer is subsequently applied and patterned to form an opening, of which the overlay tolerance increases by a pitch of fin-defining spacers due to the mask material portions. Alternately, a conformal silicon oxide layer can be deposited on fin-defining spacers and structure-damaging ion implantation is performed only on fin-defining spacers located on one side of each mandrel structure. A photoresist layer is subsequently applied and patterned to form an opening, from which a damaged silicon oxide portion and an underlying fin-defining spacer are removed, while undamaged silicon oxide portions are not removed. An array of semiconductor fins including a vacancy can be formed by transferring the pattern into a semiconductor layer.
Public/Granted literature
- US20140099792A1 SINGLE FIN CUT EMPLOYING ANGLED PROCESSING METHODS Public/Granted day:2014-04-10
Information query
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