Invention Grant
- Patent Title: Wet etch and clean chemistries for MoOx
- Patent Title (中): MoOx湿法蚀刻和清洁化学品
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Application No.: US13165923Application Date: 2011-06-22
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Publication No.: US08906812B2Publication Date: 2014-12-09
- Inventor: Wim Deweerd , Kim Van Berkel , Hiroyuki Ode
- Applicant: Wim Deweerd , Kim Van Berkel , Hiroyuki Ode
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306 ; H01L49/02 ; H01L21/3213
Abstract:
A method of removing non-noble metal oxides from material (e.g., semiconductor material) used to make a microelectronic device includes providing the material comprising traces of the conducting non-noble metal oxides; applying a chemical mixture (or chemical solution) to the material; removing the traces of the non-noble metal oxides from the material; and removing the chemical mixture from the material. The non-noble metal oxides comprise MoOx, wherein x is a positive number between 0 and 3. The chemical solution comprises any one of HNO3-based chemicals, H2SO4-based chemicals, HCl-based chemicals, or NH4OH-based chemicals.
Public/Granted literature
- US20120329235A1 WET ETCH AND CLEAN CHEMISTRIES FOR MoOx Public/Granted day:2012-12-27
Information query
IPC分类:
