Invention Grant
- Patent Title: Combined Pn junction and bulk photovoltaic device
- Patent Title (中): 组合Pn结和体光伏器件
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Application No.: US13162186Application Date: 2011-06-16
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Publication No.: US08907205B2Publication Date: 2014-12-09
- Inventor: Riad Nechache , Andreas Ruediger , Federico Rosei
- Applicant: Riad Nechache , Andreas Ruediger , Federico Rosei
- Applicant Address: CA Montreal
- Assignee: Institut National de la Recherche Scientifique (INRS)
- Current Assignee: Institut National de la Recherche Scientifique (INRS)
- Current Assignee Address: CA Montreal
- Agency: Goudreau Gage Dubuc
- Agent Gwendoline Bruneau
- Main IPC: H01L31/078
- IPC: H01L31/078 ; H01L31/032 ; H01L31/052
Abstract:
A solar cell comprising a semiconductor solar cell of a first band gap; a buffer layer formed on a surface of the semiconductor solar cell; and at least one layer of a multiferroic or a ferroelectric material formed on the buffer layer; wherein the at least one layer of a multiferroic or a ferroelectric material has a second bang gap, the first band gap being smaller than the second band gap.
Public/Granted literature
- US20120017976A1 COMBINED PN JUNCTION AND BULK PHOTOVOLTAIC DEVICE Public/Granted day:2012-01-26
Information query
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