Invention Grant
- Patent Title: Annealing apparatus using two wavelengths of laser radiation
- Patent Title (中): 使用两个波长的激光辐射的退火装置
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Application No.: US13485752Application Date: 2012-05-31
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Publication No.: US08907247B2Publication Date: 2014-12-09
- Inventor: Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Hunter , Bruce Adams , Joseph Michael Ranish
- Applicant: Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Hunter , Bruce Adams , Joseph Michael Ranish
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: B23K26/06
- IPC: B23K26/06 ; B23K26/073 ; B23K26/00 ; H01L21/268 ; H01L21/324 ; H01L21/20

Abstract:
A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
Public/Granted literature
- US20120234801A1 ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION Public/Granted day:2012-09-20
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