Invention Grant
US08907394B2 Insulated gate semiconductor device having shield electrode structure
有权
具有屏蔽电极结构的绝缘栅半导体器件
- Patent Title: Insulated gate semiconductor device having shield electrode structure
- Patent Title (中): 具有屏蔽电极结构的绝缘栅半导体器件
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Application No.: US14294971Application Date: 2014-06-03
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Publication No.: US08907394B2Publication Date: 2014-12-09
- Inventor: Zia Hossain
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/78
Abstract:
In one embodiment, a semiconductor device includes a multi-portion shield electrode structure formed in a drift region. The shield electrode includes a wide portion formed in proximity to a channel side of the drift region, and a narrow portion formed deeper in the drift region. The narrow portion is separated from the drift region by a thicker dielectric region, and the wide portion is separated from the drift region by a thinner dielectric region. That portion of the drift region in proximity to the wide portion can have a higher dopant concentration than other portions of the drift region.
Public/Granted literature
- US20140284710A1 INSULATED GATE SEMICONDUCTOR DEVICE HAVING SHIELD ELECTRODE STRUCTURE Public/Granted day:2014-09-25
Information query
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