Semiconductor structures with dual trench regions and methods of manufacturing the semiconductor structures are provided herein. The method includes forming a gate structure on an active region and high-k dielectric material formed in one or more trenches adjacent to the active region. The method further includes forming a sacrificial material over the active region and portions of the high-k dielectric material adjacent sidewalls of the active region. The method further includes removing unprotected portions of the high-k dielectric material, leaving behind a liner of high-k dielectric material on the sidewalls of the active region. The method further includes removing the sacrificial material and forming a raised source and drain region adjacent to sidewalls of the gate structure.