Invention Grant
- Patent Title: High voltage fast recovery trench diode
- Patent Title (中): 高电压快速恢复沟槽二极管
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Application No.: US14226639Application Date: 2014-03-26
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Publication No.: US08907414B2Publication Date: 2014-12-09
- Inventor: Jun Hu , Karthik Padmanabhan , Madhur Bobde , Hamza Yilmaz
- Applicant: Alpha & Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/861 ; H01L21/02

Abstract:
Aspects of the present disclosure describe high voltage fast recovery trench diodes and methods for make the same. The device may have trenches that extend at least through a top P-layer and an N-barrier layer. A conductive material may be disposed in the trenches with a dielectric material lining the trenches between the conductive material and sidewalls of the trenches. A highly doped P-pocket may be formed in an upper portion of the top P-layer between the trenches. A floating N-pocket may be formed directly underneath the P-pocket. The floating N-pocket may be as wide as or wider than the P-pocket. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20140239436A1 HIGH VOLTAGE FAST RECOVERY TRENCH DIODE Public/Granted day:2014-08-28
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