Invention Grant
US08907440B2 High speed backside illuminated, front side contact photodiode array
有权
高速背面照明，前端接触光电二极管阵列
- Patent Title: High speed backside illuminated, front side contact photodiode array
- Patent Title (中): 高速背面照明，前端接触光电二极管阵列
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Application No.: US13955299Application Date: 2013-07-31
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Publication No.: US08907440B2Publication Date: 2014-12-09
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: OSI Optoelectronics
- Applicant Address: US CA Hawthorne
- Assignee: OSI Optoelectronics, Inc.
- Current Assignee: OSI Optoelectronics, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: Novel IP
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L31/0352 ; H01L27/146 ; H01L27/144
Abstract:
The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region.
Public/Granted literature
- US20140061843A1 High Speed Backside Illuminated, Front Side Contact Photodiode Array Public/Granted day:2014-03-06
Information query
IPC分类:
