Invention Grant
US08907454B2 Transistor with heat sink joined to only part of one electrode
有权
具有散热片的晶体管仅连接到一个电极的一部分
- Patent Title: Transistor with heat sink joined to only part of one electrode
- Patent Title (中): 具有散热片的晶体管仅连接到一个电极的一部分
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Application No.: US13763798Application Date: 2013-02-11
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Publication No.: US08907454B2Publication Date: 2014-12-09
- Inventor: Yoshinobu Sasaki , Hitoshi Kurusu
- Applicant: Yoshinobu Sasaki , Hitoshi Kurusu
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2012-085642 20120404
- Main IPC: H01L27/102
- IPC: H01L27/102 ; H01L27/04 ; H01L29/73
Abstract:
A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
Public/Granted literature
- US20130264682A1 TRANSISTOR Public/Granted day:2013-10-10
Information query
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