Invention Grant
- Patent Title: Field emission electron source and field emission device using the same
- Patent Title (中): 场致发射电子源和场致发射装置使用
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Application No.: US13592795Application Date: 2012-08-23
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Publication No.: US08907555B2Publication Date: 2014-12-09
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210042270 20120223
- Main IPC: H01J19/24
- IPC: H01J19/24 ; H01J19/06

Abstract:
A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.
Public/Granted literature
- US20130221836A1 FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE USING THE SAME Public/Granted day:2013-08-29
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