Invention Grant
US08907605B2 Circuit structure enabling upgraded MOS transistor heat dissipation ability
有权
电路结构使MOS晶体管的散热能力得到提升
- Patent Title: Circuit structure enabling upgraded MOS transistor heat dissipation ability
- Patent Title (中): 电路结构使MOS晶体管的散热能力得到提升
-
Application No.: US13723128Application Date: 2012-12-20
-
Publication No.: US08907605B2Publication Date: 2014-12-09
- Inventor: Bao-Lin Yao , Qing-Wu Hu
- Applicant: Asia Vital Components (China) Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Asia Vital Components (China) Co., Ltd.
- Current Assignee: Asia Vital Components (China) Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Nikolai & Mersereau, P.A.
- Agent C. G. Mersereau
- Main IPC: H02P6/00
- IPC: H02P6/00 ; H02K29/00

Abstract:
A circuit structure applied to a motor and enabling upgraded MOS transistor heat dissipation ability is disclosed. The circuit structure includes a motor driving unit and a signal processing unit. The signal processing unit is connected to the motor driving unit for maintaining a first and a third switch of the motor driving unit at a constant turn-on voltage and boosting turn-on voltages of a second and a fourth switch of the motor driving unit, so as to effectively upgrade the heat dissipation ability of the first, second, third and fourth switches.
Public/Granted literature
- US20140175952A1 CIRCUIT STRUCTURE ENABLING UPGRADED MOS TRANSISTOR HEAT DISSIPATION ABILITY Public/Granted day:2014-06-26
Information query