Invention Grant
- Patent Title: Contact structure
- Patent Title (中): 接触结构
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Application No.: US12257514Application Date: 2008-10-24
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Publication No.: US08908138B2Publication Date: 2014-12-09
- Inventor: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP9-094606 19970327
- Main IPC: G02F1/1345
- IPC: G02F1/1345 ; G02F1/1339

Abstract:
There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
Public/Granted literature
- US20090050890A1 CONTACT STRUCTURE Public/Granted day:2009-02-26
Information query
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