Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13332861Application Date: 2011-12-21
-
Publication No.: US08908345B2Publication Date: 2014-12-09
- Inventor: Futoshi Furuta , Kenichi Osada
- Applicant: Futoshi Furuta , Kenichi Osada
- Applicant Address: JP Tokyo
- Assignee: Hitachi,Ltd.
- Current Assignee: Hitachi,Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-286163 20101222
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04 ; H01L25/065 ; H01L23/62 ; H01L23/48

Abstract:
In a stacked chip system, an IO circuit connected to a TSV pad for IO and a switch circuit constitute an IO channel in each chip, the IO channels as many as the maximum scheduled number of stacks are coupled together and connected to constitute an IO group, and the chip has one or more such IO groups. Each TSV pad for IO is connected with a through via to an IO terminal at the same position in a chip of another layer. On an interposer, if the actual number of stacks is less than the maximum scheduled number of stacks, connection pads for IO in adjacent IO groups on the interposer are connected via a conductor.
Public/Granted literature
- US20120162836A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-06-28
Information query
IPC分类: