Invention Grant
US08908414B2 Modified reset state for enhanced read margin of phase change memory
有权
修改复位状态，提高相变存储器的读余量
- Patent Title: Modified reset state for enhanced read margin of phase change memory
- Patent Title (中): 修改复位状态，提高相变存储器的读余量
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Application No.: US13512006Application Date: 2009-12-18
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Publication No.: US08908414B2Publication Date: 2014-12-09
- Inventor: Mattia Boniardi , Andrea Redaelli , Fabio Pellizzer , Daniele Ielmini , Agostino Pirovano
- Applicant: Mattia Boniardi , Andrea Redaelli , Fabio Pellizzer , Daniele Ielmini , Agostino Pirovano
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear, LLP
- International Application: PCT/IT2009/000572 WO 20091218
- International Announcement: WO2011/074021 WO 20110623
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.
Public/Granted literature
- US20130107618A1 MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY Public/Granted day:2013-05-02
Information query
