Invention Grant
- Patent Title: Magnetoresistive effect element, and magnetic random access memory
- Patent Title (中): 磁阻效应元件和磁性随机存取存储器
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Application No.: US13512215Application Date: 2010-11-22
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Publication No.: US08908423B2Publication Date: 2014-12-09
- Inventor: Hiroaki Honjou
- Applicant: Hiroaki Honjou
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-270093 20091127
- International Application: PCT/JP2010/070791 WO 20101122
- International Announcement: WO2011/065323 WO 20110603
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/08 ; G11C11/16 ; H01L27/22
Abstract:
A magnetoresistive effect element includes: a magnetization free layer having an invertible magnetization; an insulating layer being adjacent to the magnetization free layer; and a magnetization fixed layer being adjacent to the insulation layer and in an opposite side of the insulation layer to the magnetization free layer. The magnetization free layer includes: a first magnetization free layer being adjacent to the insulating layer and comprising Fe or Co; and a second magnetization free layer being adjacent to the first magnetization layer and comprising NiFeB.
Public/Granted literature
- US20120281463A1 MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2012-11-08
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