Invention Grant
- Patent Title: Semiconductor memory apparatus and method of controlling external voltage using the same
- Patent Title (中): 半导体存储装置及使用其的外部电压的控制方法
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Application No.: US14018732Application Date: 2013-09-05
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Publication No.: US08908448B2Publication Date: 2014-12-09
- Inventor: Yeon Uk Kim , Jae Boum Park
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2013-0045530 20130424
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C29/00
Abstract:
A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit.
Public/Granted literature
- US20140321220A1 SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF CONTROLLING EXTERNAL VOLTAGE USING THE SAME Public/Granted day:2014-10-30
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