Invention Grant
- Patent Title: Sense amplifier circuit for nonvolatile memory
- Patent Title (中): 用于非易失性存储器的感应放大器电路
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Application No.: US13754346Application Date: 2013-01-30
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Publication No.: US08908458B2Publication Date: 2014-12-09
- Inventor: Yong Seop Lee
- Applicant: Yong Seop Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- Priority: KR10-2012-0086360 20120807
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/06
Abstract:
A sense amplifier circuit for a nonvolatile memory that includes a first amplifier to perform a switching operation to output a first signal on a sense amplifier based logic (SABL) node depending on the state of a sensing enable signal, a second amplifier to perform a switching operation to output a second signal on the SABL node depending on the state of the sensing enable signal, a current mirror that sinks current on the SABL node depending on the sensing enable signal and a bit line signal, and an inverter arranged to output the signal on the SABL node as a data signal.
Public/Granted literature
- US20140043928A1 Sense Amplifier Circuit for Nonvolatile Memory Public/Granted day:2014-02-13
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