Invention Grant
US08908830B2 Surface microstructure measurement method, surface microstructure measurement data analysis method and X-ray scattering measurement device 有权
表面微结构测量方法,表面微结构测量数据分析方法和X射线散射测量装置

  • Patent Title: Surface microstructure measurement method, surface microstructure measurement data analysis method and X-ray scattering measurement device
  • Patent Title (中): 表面微结构测量方法,表面微结构测量数据分析方法和X射线散射测量装置
  • Application No.: US13264222
    Application Date: 2010-04-12
  • Publication No.: US08908830B2
    Publication Date: 2014-12-09
  • Inventor: Kazuhiko OmoteYoshiyasu Ito
  • Applicant: Kazuhiko OmoteYoshiyasu Ito
  • Applicant Address: JP Akishima-Shi
  • Assignee: Rigaku Corporation
  • Current Assignee: Rigaku Corporation
  • Current Assignee Address: JP Akishima-Shi
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: JP2009-097606 20090414
  • International Application: PCT/JP2010/056542 WO 20100412
  • International Announcement: WO2010/119844 WO 20101021
  • Main IPC: G01B15/04
  • IPC: G01B15/04
Surface microstructure measurement method, surface microstructure measurement data analysis method and X-ray scattering measurement device
Abstract:
There is provided a surface microstructure measurement method, a surface microstructure measurement data analysis method, and an X-ray scattering measurement device which can accurately measure a microstructure on a surface and which can evaluate a three-dimensional structural feature. In the surface microstructure measurement method, the specimen surface is irradiated with X-ray at a grazing incident angle and a scattering intensity is measured; a specimen model with a microstructure on a surface in which one or more layers is formed in a direction perpendicular to the surface and unit structures are periodically arranged in a direction parallel to the surface within the layers is assumed; a scattering intensity of X-ray scattered by the microstructure is calculated in consideration of effects of refraction and reflection caused by the layer; and the scattering intensity of X-ray calculated by the specimen model is fitted to the measured scattering intensity. Then, as a result of the fitting, an optimum value of a parameter for specifying the shape of the unit structures is determined. Therefore, it is possible to accurately measure a microstructure.
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