Invention Grant
- Patent Title: Program-disturb management for phase change memory
- Patent Title (中): 相变存储器的程序干扰管理
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Application No.: US13474609Application Date: 2012-05-17
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Publication No.: US08910000B2Publication Date: 2014-12-09
- Inventor: Ferdinando Bedeschi
- Applicant: Ferdinando Bedeschi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/00 ; G11C16/34 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to read or write performance of a phase change memory.
Public/Granted literature
- US20130311837A1 PROGRAM-DISTURB MANAGEMENT FOR PHASE CHANGE MEMORY Public/Granted day:2013-11-21
Information query
