Invention Grant
US08910002B2 NAND flash-based storage device with built-in test-ahead for failure anticipation
有权
基于NAND闪存的存储设备,内置测试失败预测
- Patent Title: NAND flash-based storage device with built-in test-ahead for failure anticipation
- Patent Title (中): 基于NAND闪存的存储设备,内置测试失败预测
-
Application No.: US12862176Application Date: 2010-08-24
-
Publication No.: US08910002B2Publication Date: 2014-12-09
- Inventor: Franz Michael Schuette
- Applicant: Franz Michael Schuette
- Applicant Address: US CA San Jose
- Assignee: OCZ Storage Solutions Inc.
- Current Assignee: OCZ Storage Solutions Inc.
- Current Assignee Address: US CA San Jose
- Agency: Hartman Global IP Law
- Agent Gary M. Hartman; Michael D. Winter
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G11C16/34 ; G11C5/04 ; G11C16/04 ; G11C29/46 ; G11C29/52 ; G11C29/04

Abstract:
A test-ahead feature for non-volatile memory-based mass storage devices to anticipate device failure. The test-ahead feature includes a method performed with a solid-state mass storage device having a controller, a cache memory, and at least one non-volatile memory device. At least a first block is reserved on the at least one non-volatile memory device as a wear-indicator block and a plurality of second blocks are used for data storage. Information is stored corresponding to the number of write and erase cycles encountered by the second blocks during usage of the mass storage device, and the information is accessed to perform wear leveling among the second blocks. The wear-indicator blocks are subjected to an offset number of write and erase cycles in excess of the number of write and erase cycles encountered by the second blocks, after which an integrity check of the first block is performed.
Public/Granted literature
- US20110047421A1 NAND FLASH-BASED STORAGE DEVICE WITH BUILT-IN TEST-AHEAD FOR FAILURE ANTICIPATION Public/Granted day:2011-02-24
Information query