Invention Grant
- Patent Title: Fast photoresist model
- Patent Title (中): 快速光刻胶模型
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Application No.: US13200668Application Date: 2011-09-28
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Publication No.: US08910093B2Publication Date: 2014-12-09
- Inventor: Donis G. Flagello
- Applicant: Donis G. Flagello
- Applicant Address: JP
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP
- Agency: Quarles & Brady LLP
- Agent Yakov Sidorin
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20
Abstract:
A method of modeling an image intended to reside in a photoresist film on a substrate is provided. A simulated latent acid image of the image is produced, the simulated latent acid image is compressed in a predetermined direction, and developed to a pattern that enables (a) transfer of the pattern to the substrate or (b) further modeling of the pattern for transfer to the substrate.
Public/Granted literature
- US20120079436A1 Fast photoresist model Public/Granted day:2012-03-29
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