Invention Grant
- Patent Title: Transistors, methods of manufacturing the same and electronic devices including transistors
- Patent Title (中): 晶体管，其制造方法以及包括晶体管的电子器件
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Application No.: US13156906Application Date: 2011-06-09
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Publication No.: US08912536B2Publication Date: 2014-12-16
- Inventor: Wan-joo Maeng , Myung-kwan Ryu , Tae-sang Kim , Joon-seok Park
- Applicant: Wan-joo Maeng , Myung-kwan Ryu , Tae-sang Kim , Joon-seok Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0115765 20101119; KR10-2010-0138043 20101229
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786
Abstract:
An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.
Public/Granted literature
- US20120126223A1 TRANSISTORS, METHODS OF MANUFACTURING THE SAME AND ELECTRONIC DEVICES INCLUDING TRANSISTORS Public/Granted day:2012-05-24
Information query
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