Invention Grant
- Patent Title: Trench MOS structure and method for forming the same
- Patent Title (中): 沟槽MOS结构及其形成方法
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Application No.: US13106852Application Date: 2011-05-12
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Publication No.: US08912595B2Publication Date: 2014-12-16
- Inventor: Chin-Te Kuo , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Chin-Te Kuo , Yi-Nan Chen , Hsien-Wen Liu
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L21/308
Abstract:
A trench MOS structure is disclosed. The trench MOS structure includes a substrate, an epitaxial layer, a doping well, a doping region and a trench gate. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. The trench gate is partially disposed in the doping region. The trench gate has a bottle shaped profile with a top section smaller than a bottom section, both are partially disposed in the doping well. The bottom section of two adjacent trench gates results in a higher electrical field around the trench MOS structures.
Public/Granted literature
- US20120286353A1 TRENCH MOS STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2012-11-15
Information query
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