Invention Grant
- Patent Title: FinFETs and methods for forming the same
- Patent Title (中): FinFET及其形成方法
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Application No.: US12758426Application Date: 2010-04-12
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Publication No.: US08912602B2Publication Date: 2014-12-16
- Inventor: Yu-Rung Hsu , Chen-Hua Yu , Chen-Nan Yeh
- Applicant: Yu-Rung Hsu , Chen-Hua Yu , Chen-Nan Yeh
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/66
Abstract:
A Fin field effect transistor includes a fin disposed over a substrate. A gate is disposed over a channel portion of the fin. A source region is disposed at a first end of the fin. A drain region is disposed at a second end of the fin. The source region and the drain region are spaced from the substrate by at least one air gap.
Public/Granted literature
- US20100258870A1 FINFETS AND METHODS FOR FORMING THE SAME Public/Granted day:2010-10-14
Information query
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