Invention Grant
- Patent Title: High frequency transition matching in an electronic package for millimeter wave semiconductor dies
- Patent Title (中): 用于毫米波半导体管芯的电子封装中的高频转换匹配
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Application No.: US13433313Application Date: 2012-03-29
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Publication No.: US08912634B2Publication Date: 2014-12-16
- Inventor: Elad Danny , Kaminski Noam , Okamoto Keishi , Shumaker Evgeny , Toriyama Kazushige
- Applicant: Elad Danny , Kaminski Noam , Okamoto Keishi , Shumaker Evgeny , Toriyama Kazushige
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/04 ; H01L23/34 ; H01L23/52 ; H01L21/44 ; H01L23/66 ; H01L23/00

Abstract:
A mmWave electronics package constructed from common Printed Circuit Board (PCB) technology and a metal cover. Assembly of the package uses standard pick and place technology and heat is dissipated directly to a pad on the package. Input/output of mmWave signal(s) is achieved through a rectangular waveguide. Mounting of the electronic package to an electrical printed circuit board (PCB) is performed using conventional reflow soldering processes and includes a waveguide I/O connected to an mmWave antenna. The electronic package provides for transmission of low frequency, dc and ground signals from the semiconductor chip inside the package to the PCB it is mounted on. An impedance matching scheme matches the chip to high frequency board transition by altering the ground plane within the chip. A ground plane on the high frequency board encircles the high frequency signal bump to confine the electromagnetic fields to the bump region reducing radiation loss.
Public/Granted literature
- US20130256849A1 HIGH FREQUENCY TRANSITION MATCHING IN AN ELECTRONIC PACKAGE FOR MILLIMETER WAVE SEMICONDUCTOR DIES Public/Granted day:2013-10-03
Information query
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