Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13540565Application Date: 2012-07-02
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Publication No.: US08912640B2Publication Date: 2014-12-16
- Inventor: Keita Takada , Tadatoshi Danno , Hirokazu Kato
- Applicant: Keita Takada , Tadatoshi Danno , Hirokazu Kato
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-148139 20110704
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L23/00 ; H01L23/495 ; H01L23/31

Abstract:
A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.
Public/Granted literature
- US20130009299A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-01-10
Information query
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