Invention Grant
- Patent Title: Integrated circuit assembly and method of making
- Patent Title (中): 集成电路组件及其制作方法
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Application No.: US13725306Application Date: 2012-12-21
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Publication No.: US08912646B2Publication Date: 2014-12-16
- Inventor: Michael A. Stuber , Stuart B. Molin , Mark Drucker , Peter Fowler
- Applicant: IO Semiconductor, Inc.
- Applicant Address: US CA San Diego
- Assignee: Silanna Semiconductor U.S.A., Inc.
- Current Assignee: Silanna Semiconductor U.S.A., Inc.
- Current Assignee Address: US CA San Diego
- Agency: The Mueller Law Office, P.C.
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L27/06 ; H01L23/498 ; H01L29/786 ; H01L25/00 ; H01L21/84 ; H01L21/78 ; H01L25/065 ; H01L27/12 ; H01L21/762 ; H01L23/00 ; H01L27/092
Abstract:
An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.
Public/Granted literature
- US20130134585A1 INTEGRATED CIRCUIT ASSEMBLY AND METHOD OF MAKING Public/Granted day:2013-05-30
Information query
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