Invention Grant
- Patent Title: Latch-up free RC-based NMOS ESD power clamp in HV use
- Patent Title (中): 高压使用中的无闩锁RC型NMOS ESD功率钳
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Application No.: US13710700Application Date: 2012-12-11
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Publication No.: US08913359B2Publication Date: 2014-12-16
- Inventor: Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
- Applicant: Da-Wei Lai , Ying-Chang Lin , Handoko Linewih
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H02H3/22
- IPC: H02H3/22 ; H02H9/04
Abstract:
An RC-based electrostatic discharge protection device provides an extended snapback trigger voltage range, thereby avoiding latch-up. Two parallel current discharge paths are provided between supply terminals during an electrostatic discharge event by virtue of an added external resistor. The first current discharge path includes body resistance of the protection device and the second current discharge path includes the external resistor.
Public/Granted literature
- US20140160604A1 LATCH-UP FREE RC-BASED NMOS ESD POWER CLAMP IN HV USE Public/Granted day:2014-06-12
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