Invention Grant
US08913429B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
Abstract:
According to one embodiment, an erase verification execution unit that makes an erase verify operation of a memory cell, on which an erase operation is performed, to be performed, a number-of-erase-verifications counting unit that counts the number of erase verifications of a memory cell on which the erase operation is performed, and a number-of-erase-verifications setting unit that sets a minimum number of erase verifications for the next time based on the current number of erase verifications counted by the number-of-erase-verifications counting unit are included.
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